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SF5G42-8B Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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SF5G42-8B Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page  SF5G42,SF5J42 2001-07-10 2 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Repetitive Peak Off−State Current and Repetitive Peak Reverse Current IDRM IRRM VDRM = VRRM = Rated Tj = 125°C, RGK = 330Ω ― ― 2 mA Peak On−State Voltage VTM ITM = 15A ― ― 1.6 V Gate Trigger Voltage VGT ― ― 0.8 V Gate Trigger Current IGT VD = 6V, RL = 100Ω RGK = 330Ω ― ― 200 µA Gate Non−Trigger Voltage VGD VD = Rated × 2 / 3, Tc = 125°C 0.2 ― ― V Critical Rate of Rise of Off−State Voltage dv / dt VDRM = Rated × 2 / 3, Tc = 75°C RGK = 330Ω, Exponential Rise ― 50 ― V / µs Holding Current IH RL = 100Ω, RGK = 330Ω ― 4 ― mA Thermal Resistance Rth (j−c) Junction to Case ― ― 3 °C / W MARKING NUMBER SYMBOL MARK SF5G42 SF5G42 *1 TYPE SF5J42 SF5J42 *2 Example 8A : January 1998 8B : February 1998 8L : December 1998 |
Similar Part No. - SF5G42-8B |
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