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RN2427 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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RN2427 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 8 page RN2421~RN2427 2001-11-29 1 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2421,RN2422,RN2423,RN2424 RN2425,RN2426,RN2427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l High current type (IC(MAX) = −800mA) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Low VCE (sat) l Complementary to RN1421~RN1427 Equivalent Circuit and Bias Resistor Values Maximum Ratings (Ta = 25 °°°°C) Characteristics Symbol Rating Unit Collector-Base voltage VCBO −50 V Collector-Emitter voltage RN2421~2427 VCEO −50 V RN2421~2424 −10 RN2425, 2426 −5 Emitter-Base voltage RN2427 VEBO −6 V Collector current Ic −800 mA Collector power dissipation Pc 200 mW Junction temperature Tj 150 °C Storage temperature range RN2421~2427 Tstg −55~150 °C Unit: mm JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Type No. R1 (kΩ)R2 (kΩ) RN2421 1 1 RN2422 2.2 2.2 RN2423 4.7 4.7 RN2424 10 10 RN2425 0.47 10 RN2426 1 10 RN2427 2.2 10 |
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Similar Description - RN2427 |
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