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IS61LF102436A-6.5TQLI Datasheet(PDF) 1 Page - Integrated Silicon Solution, Inc |
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IS61LF102436A-6.5TQLI Datasheet(HTML) 1 Page - Integrated Silicon Solution, Inc |
1 / 20 page Integrated Silicon Solution, Inc. 1 Rev. B 04/17/08 IS61LF102436A IS61VF102436A IS61LF204818A IS61VF204818A Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat- est version of this device specification before relying on any published information and before placing orders for products. FEATURES • Internalself-timedwritecycle • IndividualByteWriteControlandGlobalWrite • Clockcontrolled,registeredaddress,dataand control • BurstsequencecontrolusingMODEinput • Three chip enable option for simple depth expan- sion and address pipelining • Commondatainputsanddataoutputs • AutoPower-downduringdeselect • Singlecycledeselect • SnoozeMODEforreduced-powerstandby • PowerSupply LF: Vdd 3.3V + 5%, Vddq 3.3V/2.5V + 5% VF: Vdd 2.5V + 5%, Vddq 2.5V + 5% • JEDEC100-PinTQFPand165-pinPBGApack- ages. • Lead-freeavailable APRIL 2008 1M x 36, 2M x 18 36Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION The ISSI IS61LF/VF102436A and IS61LF/VF204818A are high-speed, low-power synchronous static RAMs de- signed to provide burstable, high-performance memory for communication and networking applications.The IS61LF/ VF102436Aisorganizedas1,048,476wordsby36bits. The IS61LF/VF204818Aisorganizedas2M-wordsby18 bits. Fabricated with ISSI'sadvancedCMOStechnology, the device integrates a 2-bit burst counter, high-speed SRAMcore,andhigh-drivecapabilityoutputsintoasingle monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input. Writecyclesareinternallyself-timedandareinitiatedbythe risingedgeoftheclockinput.Writecyclescanbeoneto four bytes wide as controlled by the write control inputs. Separate byte enables allow individual bytes to be written. Bytewriteoperationisperformedbyusingbytewriteen- able (BWE) input combined with one or more individual byte write signals (BWx). Inaddition,GlobalWrite(GW) is available for writing all bytes at one time, regardless of the byte write controls. BurstscanbeinitiatedwitheitherADSP (Address Status Processor)orADSC (Address Status Cache Controller) input pins. Subsequent burst addresses can be gener- ated internally and controlled by the ADV (burst address advance) input pin. Themodepinisusedtoselecttheburstsequenceorder, LinearburstisachievedwhenthispinistiedLOW.Inter- leaveburstisachievedwhenthispinistiedHIGHorleft floating. FAST ACCESS TIME Symbol Parameter -6.5 -7.5 Units tkq ClockAccessTime 6.5 7.5 ns tkc CycleTime 7.5 8.5 ns Frequency 133 117 MHz |
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