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IS45S16160D-75ETLA1 Datasheet(PDF) 7 Page - Integrated Silicon Solution, Inc |
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IS45S16160D-75ETLA1 Datasheet(HTML) 7 Page - Integrated Silicon Solution, Inc |
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7 / 63 page  Integrated Silicon Solution, Inc. — www.issi.com 7 Rev. B 06/11/09 IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D GENERAL DESCRIPTION READ TheREADcommandselectsthebankfromBA0,BA1inputs and starts a burst read access to an active row. Inputs A0- A9(x8);A0-A8(x16)providesthestartingcolumnlocation. WhenA10isHIGH,thiscommandfunctionsasanAUTO PRECHARGE command. When the auto precharge is selected, the row being accessed will be precharged at theendoftheREADburst.Therowwillremainopenfor subsequentaccesseswhenAUTOPRECHARGEisnot selected.DQ’sreaddataissubjecttothelogiclevelon theDQMinputstwoclocksearlier.WhenagivenDQM signalwasregisteredHIGH,thecorrespondingDQ’swill be High-Z two clocks later. DQ’s will provide valid data whentheDQMsignalwasregisteredLOW. WRITE A burst write access to an active row is initiated with the WRITEcommand.BA0,BA1inputsselectsthebank,and the starting column location is provided by inputs A0-A9 (x8);A0-A8(x16).WhetherornotAUTO-PRECHARGEis used is determined by A10. Therowbeingaccessedwillbeprechargedattheendof theWRITEburst,ifAUTOPRECHARGEisselected.If AUTOPRECHARGEisnotselected,therowwillremain openforsubsequentaccesses. A memory array is written with corresponding input data onDQ’sandDQMinputlogiclevelappearingatthesame time.DatawillbewrittentomemorywhenDQMsignalis LOW.WhenDQMisHIGH,thecorrespondingdatainputs willbeignored,andaWRITEwillnotbeexecutedtothat byte/column location. PRECHARGE The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. BA0,BA1canbeusedtoselectwhichbankisprecharged or they are treated as “Don’t Care”.A10 determined whetheroneorallbanksareprecharged.Afterexecut- ing this command, the next command for the selected bank(s)isexecutedafterpassageoftheperiodt RP, which istheperiodrequiredforbankprecharging.Onceabank has been precharged, it is in the idle state and must be activatedpriortoanyREADorWRITEcommandsbeing issued to that bank. AUTO PRECHARGE TheAUTOPRECHARGEfunctionensuresthatthepre- charge is initiated at the earliest valid stage within a burst. Thisfunctionallowsforindividual-bankprechargewithout requiringanexplicitcommand.A10toenabletheAUTO PRECHARGEfunctioninconjunctionwithaspecificREAD orWRITEcommand.ForeachindividualREADorWRITE command, auto precharge is either enabled or disabled. AUTOPRECHARGEdoesnotapplyexceptinfull-page burst mode. Upon completion of the READ or WRITE burst, a precharge of the bank/row that is addressed is automatically performed. AUTO REFRESH COMMAND ThiscommandexecutestheAUTOREFRESHoperation. Therowaddressandbanktoberefreshedareautomatically generatedduringthisoperation. Thestipulatedperiod(trc)is requiredforasinglerefreshoperation,andnoothercom- mandscanbeexecutedduringthisperiod. Thiscommand isexecutedatleast8192timesforeveryTref.Duringan AUTOREFRESHcommand,addressbitsare“Don’tCare”. ThiscommandcorrespondstoCBRAuto-refresh. BURST TERMINATE The BURSTTERMINATE command forcibly terminates the burst read and write operations by truncating either fixed-length or full-page bursts and the most recently registeredREADorWRITEcommandpriortotheBURST TERMINATE. COMMAND INHIBIT COMMANDINHIBITpreventsnewcommandsfrombeing executed.Operationsinprogressarenotaffected,apart fromwhethertheCLKsignalisenabled NO OPERATION WhenCSislow,theNOPcommandpreventsunwanted commands from being registered during idle or wait states. LOAD MODE REGISTER DuringtheLOADMODEREGISTERcommandthemode registerisloadedfromA0-A12.Thiscommandcanonly be issued when all banks are idle. ACTIVE COMMAND When the ACTIVE COMMAND is activated, BA0, BA1 inputs selects a bank to be accessed, and the address inputsonA0-A12selectstherow.UntilaPRECHARGE command is issued to the bank, the row remains open for accesses. |
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