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IS42S16400E-7TLI Datasheet(PDF) 11 Page - Integrated Silicon Solution, Inc

Part # IS42S16400E-7TLI
Description  1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS42S16400E-7TLI Datasheet(HTML) 11 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com
11
Rev. C
08/07/09
IS42S16400E
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
Rating
Unit
VDD max
MaximumSupplyVoltage
–1.0to+4.6
V
VDDq max
MaximumSupplyVoltageforOutputBuffer
–1.0to+4.6
V
ViN
InputVoltage
–1.0toVDDq +0.5
V
Vout
OutputVoltage
–1.0toVDDq +0.5
V
PD max
AllowablePowerDissipation
1
W
Ics
outputShortedCurrent
50
mA
Topr
operatingTemperature
Com.
0to+70
°C
Ind.
-40to+85
°C
Tstg
StorageTemperature
–65to+150
°C
DC RECOMMENDED OPERATING CONDITIONS(2) (AtTa=0to+70°C)
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD, VDDq
SupplyVoltage
3.0
3.3
3.6
V
Vih
InputHighVoltage(3)
2.0
VDD +0.3
V
Vil
InputLowVoltage(4)
-0.3
+0.8
V
CAPACITANCE CHARACTERISTICS(1,2) (AtTa=0to+25°C,VDD=VDDq=3.3±0.3V,f=1MHz)
Symbol
Parameter
Typ.
Max.
Unit
CiN
InputCapacitance:AddressandControl
3.8
pF
Cclk
InputCapacitance:(CLK)
3.5
pF
CI/O
DataInput/OutputCapacitance:I/O0-I/O15
6.5
pF
Notes:
1. StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamagetothedevice.Thisisa
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sectionsofthisspecificationisnotimplied.Exposuretoabsolutemaximumratingconditionsforextendedperiodsmayaffect
reliability.
2. AllvoltagesarereferencedtoGND.
3.Vih(max)=VDDq+2.0Vwithapulsewidth<3ns.
4.Vil(min)=GND-2.0Vwithapulsewidth<3ns.


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