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MC9S08SV16CBM Datasheet(PDF) 11 Page - Freescale Semiconductor, Inc |
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MC9S08SV16CBM Datasheet(HTML) 11 Page - Freescale Semiconductor, Inc |
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11 / 40 page  Electrical Characteristics MC9S08SV16 Series Data Sheet, Rev. 2 Freescale Semiconductor 11 where: TA = Ambient temperature, °C θJA = Package thermal resistance, junction-to-ambient, °C/W PD = Pint + PI/O Pint = IDD × VDD, Watts — chip internal power PI/O = Power dissipation on input and output pins — user determined For most applications, PI/O << Pint and can be neglected. An approximate relationship between PD and TJ (if PI/O is neglected) is: PD = K ÷ (TJ + 273°C) Eqn. 2 Solving Equation 1 and Equation 2 for K gives: K = PD × (TA + 273°C) + θJA × (PD) 2 Eqn. 3 where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring PD (at equilibrium) for an known TA. Using this value of K, the values of PD and TJ can be obtained by solving Equation 1 and Equation 2 iteratively for any value of TA. 5.5 ESD Protection and Latch-Up Immunity Although damage from electrostatic discharge (ESD) is much less common on these devices than on early CMOS circuits, normal handling precautions must be taken to avoid exposure to static discharge. Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels of static without suffering any permanent damage. During the device qualification, ESD stresses were performed for the human body model (HBM) and the charge device model (CDM). A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot temperature, unless instructed otherwise in the device specification. Table 5. ESD and Latch-Up Test Conditions Model Description Symbol Value Unit Human body Series resistance R1 1500 Ω Storage capacitance C 100 pF Number of pulses per pin — 1 — Latch-up Minimum input voltage limit — –2.5 V Maximum input voltage limit — 7.5 V |
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