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ATP108 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # ATP108
Description  P-Channel Silicon MOSFET General-Purpose Switching Device Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ATP108 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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ATP108
No. A1604-2/4
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.5
--2.6
V
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--35A
65
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--35A, VGS=--10V
8
10.4
mΩ
RDS(on)2
ID=--18A, VGS=--4.5V
11.5
16.5
mΩ
Input Capacitance
Ciss
VDS=--20V, f=1MHz
3850
pF
Output Capacitance
Coss
VDS=--20V, f=1MHz
560
pF
Reverse Transfer Capacitance
Crss
VDS=--20V, f=1MHz
390
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
19
ns
Rise Time
tr
See specified Test Circuit.
340
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
340
ns
Fall Time
tf
See specified Test Circuit.
290
ns
Total Gate Charge
Qg
VDS=--20V, VGS=--10V, ID=--70A
79.5
nC
Gate-to-Source Charge
Qgs
VDS=--20V, VGS=--10V, ID=--70A
20
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--20V, VGS=--10V, ID=--70A
15
nC
Diode Forward Voltage
VSD
IS=--70A, VGS=0V
--1.05
--1.5
V
Package Dimensions
unit : mm (typ)
7057-001
Switching Time Test Circuit
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
0.4
0.55
13
2
6.5
0.6
4
0.8
1.5
0.4
2.6
4.6
0.4
2.3
2.3
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID= --35A
RL=0.57Ω
VDD= --20V
VOUT
VIN
0V
--10V
VIN
ATP108


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