2

RF Device Data

Freescale Semiconductor

MRF8S21200HR6 MRF8S21200HSR6

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

1A (Minimum)

Machine Model (per EIA/JESD22-A115)

A (Minimum)

Charge Device Model (per JESD22-C101)

IV (Minimum)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

—

—

1

μAdc

Gate-Source Leakage Current

—

—

1

μAdc

On Characteristics

Gate Threshold Voltage

1.2

2

2.7

Vdc

Gate Quiescent Voltage

2

2.7

3.5

Vdc

Drain-Source On-Voltage

0.1

0.17

0.3

Vdc

Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz

Channel Bandwidth @ ±5 MHz Offset.

Power Gain

16.5

18.1

19.5

dB

Drain Efficiency

30.0

32.6

—

%

Output Peak-to-Average Ratio @ 0.01% Probability on CCDF

PAR

5.7

6.3

—

dB

Adjacent Channel Power Ratio

ACPR

—

-37.1

-35.0

dBc

Input Return Loss

IRL

—

-15

-7

dB

Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz

Channel Bandwidth @ ±5 MHz Offset.

Frequency

(dB)

(%)

Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

2110 MHz

17.8

32.6

6.4

-37.7

-15

2140 MHz

18.1

32.6

6.3

-37.1

-15

2170 MHz

18.1

32.9

6.2

-36.2

-13

1. Part internally matched both on input and output.

(continued)