2

RF Device Data

Freescale Semiconductor

MRF8S18120HR3 MRF8S18120HSR3

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

0.47

0.46

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

1A (Minimum)

Machine Model (per EIA/JESD22-A115)

A (Minimum)

Charge Device Model (per JESD22-C101)

IV (Minimum)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

—

—

1

μAdc

Gate-Source Leakage Current

—

—

1

μAdc

On Characteristics

Gate Threshold Voltage

1.2

1.8

2.7

Vdc

Gate Quiescent Voltage

1.8

2.6

3.3

Vdc

Drain-Source On-Voltage

0.1

0.2

0.3

Vdc

Power Gain

17

18.2

20

dB

Drain Efficiency

48

49.8

—

%

Input Return Loss

IRL

—

-11

-8

dB

P1dB

112

—

—

W

Frequency

(dB)

(%)

IRL

(dB)

1805 MHz

18.2

49.8

-11

1840 MHz

18.6

51.4

-15

1880 MHz

18.7

53.9

-12

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

3. Part internally matched both on input and output.

(continued)