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MRF8S18120HR3 Datasheet(PDF) 6 Page - Freescale Semiconductor, Inc

Part # MRF8S18120HR3
Description  RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRF8S18120HR3 Datasheet(HTML) 6 Page - Freescale Semiconductor, Inc

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6
RF Device Data
Freescale Semiconductor
MRF8S18120HR3 MRF8S18120HSR3
TYPICAL CHARACTERISTICS
Figure 6. EVM versus Frequency
f, FREQUENCY (MHz)
Pout = 72 W Avg.
25 W Avg.
1900
0
6
1800
3
1
1840
1820
4
2
1860
46 W Avg.
−40
Pout, OUTPUT POWER (WATTS)
Figure 7. Spectral Regrowth at 400 kHz
versus Output Power
−45
−50
−55
f = 1880 MHz
−60
−65
−70
0
−80
−50
0
Pout, OUTPUT POWER (WATTS)
−60
−65
−70
10
Figure 8. Spectral Regrowth at 600 kHz
versus Output Power
20
100
−75
30
40
50
−55
60
70
80
90
5
1880
10
20
30
40
50
60
70
80
90
100
1840 MHz
1805 MHz
f = 1880 MHz
1840 MHz
1805 MHz
Pout, OUTPUT POWER (WATTS) AVG.
100
4
10
8
6
0
10
1
2
15
75
45
30
0
Figure 9. EVM and Drain Efficiency versus
Output Power
EVM
60
ηD
f = 1880 MHz
1840 MHz
1805 MHz
1840 MHz
Figure 10. Broadband Frequency Response
0
20
1440
f, FREQUENCY (MHz)
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 800 mA
15
10
5
1540
Gain
1640
1740
1840
2040
2140 2240
2340
IRL
−20
0
−5
−10
−15
1940
VDD = 28 Vdc, IDQ = 800 mA
EDGE Modulation
VDD = 28 Vdc, IDQ = 800 mA
EDGE Modulation
VDD = 28 Vdc, IDQ = 800 mA
EDGE Modulation
VDD = 28 Vdc, IDQ = 800 mA
EDGE Modulation


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