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PTVS40VS1UR Datasheet(PDF) 3 Page - NXP Semiconductors |
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PTVS40VS1UR Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 10 page PTVSXS1UR_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 10 September 2009 3 of 10 NXP Semiconductors PTVSxS1UR series 400 W Transient Voltage Suppressor 5. Limiting values [1] In accordance with IEC 61643-321 (10/1000 µs current waveform). [2] For PTVS3V3S1UR: PPPM = 350 W 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. [4] Soldering point of cathode tab. 7. Characteristics Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit PPPM rated peak pulse power [1][2] - 400 W IPPM rated peak pulse current [1] - see Table 7 and 8 IFSM Non-repetitive peak forward current single half-sine wave; tp = 8.3 ms -50 A Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 220 K/W [2] - - 130 K/W [3] --70 K/W Rth(j-sp) thermal resistance from junction to solder point [4] --18 K/W Table 7. Characteristics per type; PTVS3V3S1UR to PTVS7V0S1UR Tj =25 °C unless otherwise specified. Type number Reverse standoff voltage VRWM (V) Breakdown voltage VBR (V) Reverse leakage current IRM (µA) Clamping voltage VCL (V) IR =10mA at VRWM (V) Max Min Typ Max Typ Max Max IPPM (A) PTVS3V3S1UR 3.3 5.20 5.60 6.00 5 600 8.0 43.8 PTVS5V0S1UR 5.0 6.40 6.70 7.00 5 400 9.2 43.5 PTVS6V0S1UR 6.0 6.67 7.02 7.37 5 400 10.3 38.8 PTVS6V5S1UR 6.5 7.22 7.60 7.98 5 250 11.2 35.7 PTVS7V0S1UR 7.0 7.78 8.20 8.60 3 100 12.0 33.3 |
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