PESD5V0L6UAS_US_3

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 03 — 18 August 2009

5 of 14

NXP Semiconductors

PESD5V0L6UAS; PESD5V0L6US

Low capacitance 6-fold ESD protection diode arrays

6.

Characteristics

[1]

Non-repetitive current pulse 8/20

µs exponentially decay waveform according to IEC 61000-4-5; see Figure 1.

[2]

Measured between each cathode on pins 1, 2, 3, 4, 5 or 8 and anode on pin 6 or 7.

Table 9.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

reverse stand-off voltage

-

-

5

V

reverse leakage current

-

8

25

nA

clamping voltage

[1][2] --10

V

[1][2] --15

V

breakdown voltage

6.4

6.8

7.2

V

differential resistance

-

-

100

Ω

diode capacitance

see Figure 5

-

1619pF