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SSF6401 Datasheet(PDF) 1 Page - Silikron Semiconductor Co.,LTD. |
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SSF6401 Datasheet(HTML) 1 Page - Silikron Semiconductor Co.,LTD. |
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1 / 7 page  SSF6401 DESCRIPTION D G S The SSF6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape width Quantity 6401 SSF6401 SOT-23 Ø180mm 8 mm 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±8 V ID -4.3 A Drain Current-Continuous@ Current-Pulsed (Note 1) IDM -34 A Maximum Power Dissipation PD 1.3 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 100 /W ℃ ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -12 V Zero Gate Voltage Drain Current IDSS VDS=-12V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±8V,VDS=0V ±100 nA ● V = -12V,I DS D = -4.3A < 85mΩ @ V RDS(ON) GS=-2.5V < 50mΩ @ V RDS(ON) GS=-4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ● PWM applications ● Load switch ● Power management SOT-23 top view ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.0 |
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