General Purpose Transistor

PNP Silicon

1. FR-4 Minimum Pad.

2. FR-4 1.0 x 1.0 Inch Pad.

3. Pulse Test : Pulse Width ≤ 300 µS, Duty Cycle ≤ 2.0%.

Maximum Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-Continuous

Symbol

Value

-40

-40

-5.0

Unit

V

V

V

mA

-200

Rating

MMBT3906T = 2A

Device Marking

1/6

28-Sep-09

-50

-50

V

V

V

nA

nA

Off Characteristics

MMBT3906T

BASE

COLLECTOR

EMITTER

Characteristics

Tstg

Symbol

Max

200

1.6

600

300

2.4

400

-55 to +150

-55 to +150

Unit

mW

mW/°C

°C/W

mW

mW/°C

°C/W

°C

°C

Thermal Characteristics

SC-89

(SOT-523F)

3

2

1

1

2

3

-40

-40

-5.0

-

-

-

-

-

Characteristics

Symbol

Min

Max

Unit

http://www.weitron.com.tw

WEITRON

Derate above 25°C

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Ambient

Total Device Dissipation

Derate above 25°C

Junction Temperature

Storage Temperature

Lead(Pb)-Free

P b