1

Motorola Thyristor Device Data

Triacs

Silicon Bidirectional Thyristors

. . . designed primarily for full-wave ac control applications, such as light dimmers,

motor controls, heating controls and power supplies; or wherever full-wave silicon

gate controlled solid-state devices are needed. Triac type thyristors switch from a

blocking to a conducting state for either polarity of applied anode voltage with positive

or negative gate triggering.

• Blocking Voltage to 800 Volts

• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity

and Stability

• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat

Dissipation and Durability

• Gate Triggering Guaranteed in Three Modes (MAC210FP Series)

or Four Modes (MAC210AFP Series)

Rating

Symbol

Value

Unit

Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C)

1/2 Sine Wave 50 to 60 Hz, Gate Open

MAC210-4FP, MAC210A4FP

MAC210-6FP, MAC210A6FP

MAC210-8FP, MAC210A8FP

MAC210-10FP, MAC210A10FP

VDRM

200

400

600

800

Volts

On-State RMS Current (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz(2)

IT(RMS)

10

Amps

Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +70°C)

preceded and followed by rated current

ITSM

100

Amps

Circuit Fusing (t = 8.3 ms)

I2t

40

A2s

Peak Gate Power (TC = +70°C, Pulse Width = 10 µs)

PGM

20

Watts

Average Gate Power (TC = +70°C, t = 8.3 ms)

PG(AV)

0.35

Watt

Peak Gate Current (TC = +70°C, Pulse Width = 10 µs)

IGM

2

Amps

RMS Isolation Voltage (TA = 25°C, Relative Humidity p 20%)

V(ISO)

1500

Volts

Operating Junction Temperature

TJ

–40 to +125

°C

Storage Temperature Range

Tstg

–40 to +125

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

2.2

°C/W

Thermal Resistance, Case to Sink

R

θCS

2.2 (typ)

°C/W

Thermal Resistance, Junction to Ambient

R

θJA

60

°C/W

1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

2. The casetemperature referencepoint forall TCmeasurementsisapointonthecenterleadofthepackageascloseaspossibletotheplasticbody.

Order this document

by MAC210FP/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MAC210FP

Series

MAC210AFP

Series

CASE 221C-02

STYLE 3

ISOLATED TRIACs

THYRISTORS

10 AMPERES RMS

200 thru 800 VOLTS

MT1

G

MT2