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MC-45V8AB642KS-A75 Datasheet(PDF) 1 Page - Elpida Memory |
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MC-45V8AB642KS-A75 Datasheet(HTML) 1 Page - Elpida Memory |
1 / 16 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for availability and additional information. MOS INTEGRATED CIRCUIT MC-45V8AB642KS DATA SHEET Document No. E0028N11 (Ver. 1.1) (Previous No. M15239EJ1V0DS00) Date Published April 2001 CP (K) Printed in Japan 8M-WORD BY 64-BIT VirtualChannel TM DYNAMIC RAM MODULE (SO DIMM) Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. Description The MC-45V8AB642KS is a 8,388,608 words by 64 bits VirtualChannel dynamic RAM module (small outline DIMM) on which 4 pieces of 128M VirtualChannel DRAM : µPD45V128161 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surface- mounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise reduction. Features • 8,388,608 words by 64 bits organization • Clock frequency and access time from CLK Part number Read Clock Access time Maximum supply current mA latency frequency from CLK Operating Refresh MHz (MAX.) ns (MAX.) Prefetch Restore Channel Auto Self read / write (Burst) MC-45V8AB642KS-A75 2 133 5.4 600 300 920 8 • Fully Standard Synchronous Dynamic RAM, with all signals referenced to a positive clock edge • Dual internal banks controlled by BA0 (Bank Select) • Programmable wrap sequence (interleave) • Programmable burst length (4) • Read latency (2) • Prefetch read latency (4) • Auto precharge and without auto precharge • Auto refresh and self refresh • Single 3.3 V ± 0.3 V power supply • Interface: LVTTL • Refresh cycle: 4K cycles/64 ms • 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm) • Unbuffered type • Serial PD This Product became EOL in January, 2003. |
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