HB52R1289E2U-A6B datasheet(10/22 Pages) ELPIDA

Part #	HB52R1289E2U-A6B

Description	1 GB Registered SDRAM DIMM 128-Mword 횞 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M 횞 4 Components) PC100 SDRAM

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Manufacturer	ELPIDA [Elpida Memory]

Direct Link	http://www.elpida.com/en

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10 / 22 page

HB52R1289E2U-A6B/B6B

Preliminary Data Sheet E0016H10

10

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Note

Voltage on any pin relative to V

SS

V

T

–0.5 to V

CC + 0.5

(

≤ 4.6 (max))

V1

Supply voltage relative to V

SS

V

CC

–0.5 to +4.6

V

1

Short circuit output current

Iout

50

mA

Power dissipation

P

T

18.0

W

Operating temperature

Topr

0 to +55

°C

Storage temperature

Tstg

–50 to +100

°C

Note:

1. Respect to V

SS

DC Operating Conditions (Ta = 0 to +55°C)

Parameter

Symbol

Min

Max

Unit

Notes

Supply voltage

V

CC

3.0

3.6

V

1, 2

V

SS

00V

3

Input high voltage

V

IH

2.0

V

CC

V

1, 4

Input low voltage

V

IL

0

0.8

V

1, 5

Ambient illuminance

——

100

lx

Notes: 1. All voltage referred to V

SS

2. The supply voltage with all VCC and V

CCQ pins must be on the same level.

3. The supply voltage with all VSS and V

SSQ pins must be on the same level.

4. V

IH (max) = VCC + 2.0 V for pulse width

≤ 3 ns at V

CC.

5. V

IL (min) = VSS – 2.0 V for pulse width

≤ 3 ns at V

SS.

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