HM5113165FTD-6 datasheet(7/27 Pages) ELPIDA

Part #	HM5113165FTD-6

Description	128M EDO DRAM (8-Mword 횞 16-bit) 4k refresh

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Manufacturer	ELPIDA [Elpida Memory]

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HM5113165FTD-6

Data Sheet E0177H10

7

AC Characteristics (Ta = 0 to +70˚C, V

CC = 3.3 V ± 0.3 V, VSS = 0 V) *

1, *2, *19

Test Conditions

• Input rise and fall time: 2 ns

• Input pulse levels: V

IL = 0 V, VIH = 3.0 V

• Input timing reference levels: 0.8 V, 2.0 V

• Output timing reference levels: 0.8 V, 2.0 V

• Output load: 1 TTL gate + C

L (100 pF) (Including scope and jig)

Read, Write, Read-Modify-Write and Refresh Cycles (Common parameters)

HM5113165F

-6

Parameter

Symbol

Min

Max

Unit

Notes

Random read or write cycle time

t

RC

104

—

ns

RAS precharge time

t

RP

40

—

ns

CAS precharge time

t

CP

10

—

ns

23

RAS pulse width

t

RAS

60

10000

ns

CAS pulse width

t

CAS

10

10000

ns

Row address setup time

t

ASR

0—

ns

Row address hold time

t

RAH

10

—

ns

Column address setup time

t

ASC

0

—

ns

23

Column address hold time

t

CAH

10

—

ns

23

RAS to CAS delay time

t

RCD

14

45

ns

3

RAS to column address delay time

t

RAD

12

30

ns

4

RAS hold time

t

RSH

15

—

ns

CAS hold time

t

CSH

40

—

ns

CAS to RAS precharge time

t

CRP

5

—

ns

23

OE to Din delay time

t

OED

15

—

ns

5

OE delay time from Din

t

DZO

0

—

ns

6

CAS delay time from Din

t

DZC

0

—

ns

6

Transition time (rise and fall)

t

T

250

ns

7

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Similar Description - HM5113165FTD-6

Manufacturer	Part #	Datasheet	Description
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HM5113165FTD-6 Datasheet(PDF) 7 Page - Elpida Memory

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