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HM534253BJ-8 Datasheet(PDF) 9 Page - Elpida Memory

Part # HM534253BJ-8
Description  1 M VRAM (256-kword x 4-bit)
Download  45 Pages
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Manufacturer  ELPIDA [Elpida Memory]
Direct Link  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

HM534253BJ-8 Datasheet(HTML) 9 Page - Elpida Memory

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HM534253B Series
Data Sheet E0165H10
9
RAS
CAS
Address
WE
DT/OE
DSF
I/O
Color Register Set Cycle
Flash Write Cycle
Flash Write Cycle
Row
Xi
Xj
*1
*1
Color Data
Set color register
Execute flash write into each
I/O on row address Xi using
color resister.
Execute flash write into
each I/O on row address
Xj using color resister.
Note: 1. I/O Mask Data
Low: Mask
High: Non Mask
Figure 1 Use of Flash Write
Block Write Cycle (
CAS high, DT/OE high and DSF low at the falling edge of RAS, DSF high at the falling
edge of
CAS)
In a block write cycle, 4 columns of data (4-word
× 4-bit) are cleared to 0 or 1 at each I/O according to the
data of color register. Column addresses A0 and A1 are disregarded. The data on I/Os and addresses can be
masked. I/O level at the falling edge of
CAS determines the address to be cleared. (See figure 2.) In a page
mode cycle, mixed cycle of normal Read/Write and block write can be allowed by controlling DSF.
• Normal Mode Block Write Cycle (WE high at the falling edge of RAS)
The data on 4 I/Os are all cleared when
WE is high at the falling edge of RAS.
• Mask Block Write Mode (WE low at the falling edge of RAS)
When
WE is low at the falling edge of RAS, the HM534253B starts mask block write mode to clear the
data on an optional I/O. The mask data is the same as that of a RAM write cycle. High I/O is cleared, low
I/O is not cleared and the internal data is retained. The mask data is available in the
RAS cycle. In page
mode block write cycle, the mask data is retained during the page access.


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