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EDE5104GASA-5A-E Datasheet(PDF) 5 Page - Elpida Memory |
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EDE5104GASA-5A-E Datasheet(HTML) 5 Page - Elpida Memory |
5 / 45 page EDE5104GASA, EDE5108GASA Preliminary Data Sheet E0203E41 (Ver. 4.1) 5 DC Characteristics 1 (TA = 0 to +70 °C, VDD, VDDQ = 1.8V ± 0.1V) Parameter Symbol Grade max. Unit Test condition Operating current (ACT-PRE) IDD0 -5A -4A 110 100 mA one bank; tRC = tRC (min.) ; tCK = tCK (min.) ; DQ, DM, and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock cycle Operating current (ACT-READ-PRE) IDD1 -5A -4A 160 140 mA one bank; Burst = 4; tRC = tRC (min.) ; CL = 4; tCK = tCK (min.) ; IOUT = 0mA; address and control inputs changing once per clock cycle Precharge power-down standby current IDD2P 25 mA all banks idle; power-down mode; CKE = VIL (max.); tCK = tCK (min.) Idle standby current IDD2N -5A -4A 55 45 mA /CS = VIH (min.); all banks idle; CKE = VIH (min.); tCK = tCK (min.) ; address and control inputs changing once per clock cycle Active power-down standby current IDD3P 30 mA one bank active; power-down mode; CKE = VIL (max.); tCK = tCK (min.) Active standby current IDD3N -5A -4A 65 55 mA one bank; active / precharge;/CS = VIH (min.); CKE = VIH (min.); tRC = tRAS max; tCK = tCK (min.); DQ, DM, and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock cycle Operating current (Burst read operating) IDD4R -5A -4A 225 175 mA one bank; Burst = 4; burst; address and control inputs changing once per clock cycle; DQ and DQS outputs changing twice per clock cycle; CL = 4; tCK = tCK (min.) ; IOUT = 0mA Operating current (Burst write operating) IDD4W -5A -4A 225 175 mA one bank; Burst = 4; writes; continuous burst; address and control inputs changing once per clock cycle; DQ and DQS inputs changing twice per clock cycle; CL = 4; tCK = tCK (min.) Auto-refresh current IDD5 -5A -4A 270 250 mA tRC = tRFC (min.) Self-refresh current IDD6 4 mA CKE = 0.2V Operating current (Bank interleaving) IDD7 -5A -4A 440 380 mA Four bank interleaving READs (BL4) with auto precharge, tRC = tRC (min.); Address and control inputs change during Active, READ, or WRITE commands. DC Characteristics 2 (TA = 0 to +70 °C, VDD, VDDQ = 1.8V ± 0.1V) Parameter Symbol Unit Notes Minimum required output pull-up under AC test load VOH VTT + 0.603 V Maximum required output pull-down under AC test load VOL VTT – 0.603 V Output timing measurement reference level VOTR 0.5 × VDDQ V 1 Output minimum sink DC current IOL +13.4 mA 3, 4, Output minimum source DC current IOH –13.4 mA 2, 4 Note: 1. The VDDQ of the device under test is referenced. 2. VDDQ = 1.7V; VOUT = 1.42V. 3. VDDQ = 1.9V; VOUT = 0.28V. 4. The DC value of VREF applied to the receiving device is expected to be set to VTT. |
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