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MBR735 Datasheet(PDF) 1 Page - Shanghai Lunsure Electronic Tech |
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MBR735 Datasheet(HTML) 1 Page - Shanghai Lunsure Electronic Tech |
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1 / 2 page  MBR720 THRU MBR760 7.5 Amp Schottky Barrier Rectifier Features Maximum Ratings • Operating Temperature: -55 °C to +150°C • Storage Temperature: -55 °C to +175°C Microsemi Catalog Number Device Marking Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage MBR720 MBR720 20V 14V 20V MBR730 MBR730 30V 21V 30V MBR735 MBR735 35V 24.5V 35V MBR740 MBR740 40V 28V 40V MBR745 MBR745 45V 31.5V 45V MBR760 MBR760 60V 42V 60V Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current IF(AV) 7.5A TC = 125 °C Peak Forward Surge Current IFSM 150A 8.3ms, half sine Maximum Forward Voltage Drop Per Element V F Maximum DC Reverse Current At Rated DC Blocking Voltage *Pulse test: Pulse width 300 µsec, Duty cycle 2% • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability TO-220AC 20 to 60 Volts MBR720-745 MBR760 .84V IFM = 15 A mper IFM = 7.5 A mper TA = 25 °C* .75V A B C K J I G F E D N M L H PIN 1 PIN 2 CASE PIN 12 INCHES MM A .560 .625 14.22 15.88 B .380 .420 9.65 10.67 C .100 .135 2.54 3.43 D .230 .270 5.84 6.86 E .380 .420 9.65 10.67 F ------ .250 ------ 6.35 G .500 .580 12.70 14.73 H .190 .210 4.83 5.33 I .020 .045 0.51 1.14 J .012 .025 0.30 0.64 K .139 .161 3.53 4.09 L .140 .190 3.56 4.83 M .045 .055 1.14 1.40 N .080 .115 2.03 2.92 www.cnelectr.com Typical Junction Capacitance CJ 400pF Measured at 1.0MHz, VR=4.0V MBR720-745 MBR760 IR 0.1mA 0.5mA TJ = 25 °C MBR720-745 MBR760 15mA 50mA TJ = 125 °C Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 |
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