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EBD52UC8AMFA-6B Datasheet(PDF) 11 Page - Elpida Memory

Part # EBD52UC8AMFA-6B
Description  512MB Unbuffered DDR SDRAM DIMM
Download  18 Pages
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Manufacturer  ELPIDA [Elpida Memory]
Direct Link  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

EBD52UC8AMFA-6B Datasheet(HTML) 11 Page - Elpida Memory

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EBD52UC8AMFA
Preliminary Data Sheet E0454E10 (Ver. 1.0)
11
Pin Capacitance (TA = 25°C, VDD = 2.5V ± 0.2V)
Parameter
Symbol
Pins
max.
Unit
Notes
Input capacitance
CI1
Address, /RAS, /CAS, /WE,
/CS, CKE
120
pF
Input capacitance
CI2
CK, /CK
85
pF
Data and DQS input/output
capacitance
CO
DQ, DQS
20
pF
AC Characteristics (TA = 0 to +70
°°°°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)
(DDR SDRAM Component Specification)
Parameter
Symbol
min.
max.
Unit
Notes
Clock cycle time
(CL = 2)
tCK
7.5
12
ns
10
(CL = 2.5)
tCK
6
12
ns
CK high-level width
tCH
0.45
0.55
tCK
CK low-level width
tCL
0.45
0.55
tCK
CK half period
tHP
min
(tCH, tCL)
tCK
DQ output access time from
CK, /CK
tAC
–0.7
0.7
ns
2, 11
DQS output access time from CK, /CK
tDQSCK
–0.6
0.6
ns
2, 11
DQS to DQ skew
tDQSQ
0.45
ns
3
DQ/DQS output hold time from DQS
tQH
tHP – tQHS
ns
Data hold skew factor
tQHS
0.55
ns
Data-out high-impedance time from CK, /CK
tHZ
–0.7
0.7
ns
5, 11
Data-out low-impedance time from CK, /CK
tLZ
–0.7
0.7
ns
6, 11
Read preamble
tRPRE
0.9
1.1
tCK
Read postamble
tRPST
0.4
0.6
tCK
DQ and DM input setup time
tDS
0.45
ns
8
DQ and DM input hold time
tDH
0.45
ns
8
DQ and DM input pulse width
tDIPW
1.75
ns
7
Write preamble setup time
tWPRES
0
ns
Write preamble
tWPRE
0.25
tCK
Write postamble
tWPST
0.4
0.6
tCK
9
Write command to first DQS latching transition
tDQSS
0.75
1.25
tCK
DQS falling edge to CK setup time
tDSS
0.2
tCK
DQS falling edge hold time from CK
tDSH
0.2
tCK
DQS input high pulse width
tDQSH
0.35
tCK
DQS input low pulse width
tDQSL
0.35
tCK
Address and control input setup time
tIS
0.75
ns
8
Address and control input hold time
tIH
0.75
ns
8
Address and control input pulse width
tIPW
2.2
ns
7
Mode register set command cycle time
tMRD
2
tCK
Active to Precharge command period
tRAS
42
120000
ns
Active to Active/Auto refresh command period
tRC
60
ns
Auto refresh to Active/Auto refresh command period
tRFC
72
ns


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