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EDE2508AASE Datasheet(PDF) 5 Page - Elpida Memory |
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EDE2508AASE Datasheet(HTML) 5 Page - Elpida Memory |
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5 / 66 page  EDE2504AASE, EDE2508AASE, EDE2516AASE Preliminary Data Sheet E0427E11 (Ver. 1.1) 5 Electrical Specifications • All voltages are referenced to VSS (GND) • Execute power-up and Initialization sequence before proper device operation is achieved. Absolute Maximum Ratings Parameter Symbol Rating Unit Note Power supply voltage VDD −1.0 to +2.3 V 1 Power supply voltage for output VDDQ −0.5 to +2.3 V 1 Power supply voltage for DLL VDDL −0.5 to +2.3 V 1 Input voltage VIN −0.5 to +2.3 V 1 Output voltage VOUT −0.5 to +2.3 V 1 Storage temperature Tstg −55 to +100 °C 1, 2 Power dissipation PD 1.0 W 1 Short circuit output current IOUT 50 mA 1 Notes: 1. Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. Storage temperature is the case surface temperature on the center/top side of the DRAM. Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Operating Temperature Condition Parameter Symbol Rating Unit Note Operating case temperature TC 0 to +85 °C 1, 2 Notes: 1. Operating temperature is the case surface temperature on the center/top side of the DRAM. 2. The operation temperature range is the temperature where all DRAM specification will be supported. Out side of this temperature range, even it is still within the limit of stress condition, some deviation on portion of operation specification may be required. During operation, the DRAM case temperature must be maintained between 0 to +85°C under all other specification parameters. |
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