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EDX5116ADSE Datasheet(PDF) 3 Page - Elpida Memory

Part # EDX5116ADSE
Description  512M bits XDR??DRAM
Download  78 Pages
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Manufacturer  ELPIDA [Elpida Memory]
Direct Link  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

EDX5116ADSE Datasheet(HTML) 3 Page - Elpida Memory

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Data Sheet E1033E40 (Ver. 4.0)
3
EDX5116ADSE
General Description
The timing diagrams in Figure 1 illustrate XDR DRAM device
write and read transactions. There are three sets of pins used
for normal memory access transactions: CFM/CFMN clock
pins, RQ11..0 request pins, and DQ15..0/DQN15..0 data pins.
The “N” appended to a signal name denotes the complemen-
tary signal of a differential pair.
A transaction is a collection of packets needed to complete a
memory access. A packet is a set of bit windows on the signals
of a bus. There are two buses that carry packets: the RQ bus
and DQ bus. Each packet on the RQ bus uses a set of 2 bit-
windows on each signal, while the DQ bus uses a set of 16 bit-
windows on each signal.
In the write transaction shown in Figure 1, a request packet (on
the RQ bus) at clock edge T0 contains an activate (ACT) com-
mand. This causes row Ra of bank Ba in the memory compo-
nent to be loaded into the sense amp array for the bank. A
second request packet at clock edge T1 contains a write (WR)
command. This causes the data packet D(a1) at edge T4 to be
written to column Ca1 of the sense amp array for bank Ba. A
third request packet at clock edge T3 contains another write
(WR) command. This causes the data packet D(a2) at edge T6
to be also written to column Ca2. A final request packet at
clock edge T14 contains a precharge (PRE) command.
The spacings between the request packets are constrained by
the following timing parameters in the diagram: tRCD -W, tCC ,
and tWRP . In addition, the spacing between the request packets
and data packets are constrained by the tCWD parameter. The
spacing of the CFM/CFMN clock edges is constrained by
tCYCLE.
Figure 1
XDR DRAM Device Write and Read Transactions
The read transaction shows a request packet at clock edge T0
containing an ACT command. This causes row Ra of bank Ba
of the memory component to load into the sense amp array for
the bank. A second request packet at clock edge T5 contains a
read (RD) command. This causes the data packet Q(a1) at edge
T11 to be read from column Ca1 of the sense amp array for
bank Ba. A third request packet at clock edge T7 contains
another RD command. This causes the data packet Q(a2) at
edge T13 to also be read from column Ca2. A final request
packet at clock edge T10 contains a PRE command. The spac-
ings between the request packets are constrained by the follow-
ing timing parameters in the diagram: tRCD -R, tCC , and tRDP .
In addition, the spacing between the request and data packets
are constrained by the tCAC parameter.
T0
T1
T2
T3
T4
T5
T6
T7
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 T23
T8
Transaction a: WR
a0 = {Ba,Ra}
a1 = {Ba,Ca1}
a2 = {Ba,Ca2}
a3 = {Ba}
tCC
tCWD
tCYCLE
tWRP
tRCD-W
a1
WR
a2
WR
a3
PRE
a0
ACT
D(a2)
D(a1)
Write Transaction
DQ15..0
DQN15..0
CFM
CFMN
RQ11..0
T0
T1
T2
T3
T4
T5 T6
T7
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 T23
T8
Transaction a: RD
a0 = {Ba,Ra}
a1 = {Ba,Ca1}
a2 = {Ba,Ca2}
a3 = {Ba}
tCC
tCAC
tCYCLE
tRDP
tRCD-R
a1
RD
a2
RD
a3
PRE
a0
ACT
Q(a2)
Q(a1)
Read Transaction
DQ15..0
DQN15..0
CFM
CFMN
RQ11..0


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