EBE21FD4AHFT, EBE21FD4AHFE, EBE21FD4AHFL

Preliminary Data Sheet E1001E30 (Ver. 3.0)

2

Ordering Information

Part number

DIMM speed

grade

Component JEDEC

speed bin (CL-tRCD-tRP)

Mounted devices*

1

Mounted AMB*

2

EBE21FD4AHFT-6E-E

PC2-5300F

DDR2-667 (5-5-5)

EDE5104AHSE-6E-E

IDT Rev. C1

EBE21FD4AHFT-5C-E

PC2-4200F

DDR2-533 (4-4-4)

EDE5104AHSE-6E-E

EDE5104AHSE-5C-E

EBE21FD4AHFE-6E-E

PC2-5300F

DDR2-667 (5-5-5)

EDE5104AHSE-6E-E

NECEL Rev. B5+

EBE21FD4AHFE-5C-E

PC2-4200F

DDR2-533 (4-4-4)

EDE5104AHSE-6E-E

EDE5104AHSE-5C-E

EBE21FD4AHFL-6E-E

PC2-5300F

DDR2-667 (5-5-5)

EDE5104AHSE-6E-E

INTEL Rev. D1

EBE21FD4AHFL-5C-E

PC2-4200F

DDR2-533 (4-4-4)

EDE5104AHSE-6E-E

EDE5104AHSE-5C-E

Notes: 1. Please refer to the EDE5104AHSE datasheet (E0999E) for detailed operation part and timing waveforms.

2. Please refer to the following documents for detailed operation part and timing waveforms.

Advanced Memory Buffer (AMB) specification

FB-DIMM Architecture and Protocol specification

Part Number

Elpida Memory

Density / Rank

21: 2GB/2-rank

Module Type

F: Fully Buffered

Mono Density

D: 512Mbit

Die Rev. (Mono)

DRAM Speed Grade

6E: DDR2-667 (5-5-5)

5C: DDR2-533 (4-4-4)

Product Family

E: DDR2

Type

B: Module

Power Supply, Interface

A: 1.8V, SSTL_1.8

Module Outline

F: 240-pin DIMM

AMB Device Information

T: IDT, Rev.C1

E: NECEL, Rev.B5+

L: Intel, Rev.D1

Mono Organization

4: x4

E B E 21 F D 4 A H F T - 6E - E

Environment code

E: Lead Free

(RoHS compliant)