EDE2108ABSE-5C-E datasheet(7/81 Pages) ELPIDA

Part #	EDE2108ABSE-5C-E

Description	2G bits DDR2 SDRAM

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Manufacturer	ELPIDA [Elpida Memory]

Direct Link	http://www.elpida.com/en

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EDE2104ABSE, EDE2108ABSE

Data Sheet E1196E30 (Ver. 3.0)

7

AC Overshoot/Undershoot Specification

Parameter

Pins

Specification

Unit

Maximum peak amplitude allowed for overshoot

Command, Address,

CKE, ODT

0.5

V

Maximum peak amplitude allowed for undershoot

0.5

V

Maximum overshoot area above VDD

DDR2-800

0.66

V-ns

DDR2-667

0.8

V-ns

DDR2-533

1.0

V-ns

Maximum undershoot area below VSS

DDR2-800

0.66

V-ns

DDR2-667

0.8

V-ns

DDR2-533

1.0

V-ns

Maximum peak amplitude allowed for overshoot

CK, /CK

0.5

V

Maximum peak amplitude allowed for undershoot

0.5

V

Maximum overshoot area above VDD

DDR2-800, 667

0.23

V-ns

DDR2-533

0.28

V-ns

Maximum undershoot area below VSS

DDR2-800, 667

0.23

V-ns

DDR2-533

0.28

V-ns

Maximum peak amplitude allowed for overshoot

DQ, DQS, /DQS,

0.5

V

Maximum peak amplitude allowed for undershoot

RDQS, /RDQS, DM

0.5

V

Maximum overshoot area above VDDQ

DDR2-800, 667

0.23

V-ns

DDR2-533

0.28

V-ns

Maximum undershoot area below VSSQ

DDR2-800, 667

0.23

V-ns

DDR2-533

0.28

V-ns

Maximum amplitude

Overshoot area

Undershoot area

Volts (V)

Time (ns)

VDD, VDDQ

VSS, VSSQ

Overshoot/Undershoot Definition

Similar Part No. - EDE2108ABSE-5C-E

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EDE2108ABSE-5C-E Datasheet(PDF) 7 Page - Elpida Memory

EDE2108ABSE-5C-E Datasheet(HTML) 7 Page - Elpida Memory

Similar Part No. - EDE2108ABSE-5C-E

Similar Description - EDE2108ABSE-5C-E

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