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EDE2104ABSE-6E-E Datasheet(PDF) 6 Page - Elpida Memory |
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EDE2104ABSE-6E-E Datasheet(HTML) 6 Page - Elpida Memory |
6 / 81 page EDE2104ABSE, EDE2108ABSE Data Sheet E1196E30 (Ver. 3.0) 6 Recommended DC Operating Conditions (SSTL_18) Parameter Symbol min. typ. max. Unit Notes Supply voltage VDD 1.7 1.8 1.9 V 4 Supply voltage for output VDDQ 1.7 1.8 1.9 V 4 Input reference voltage VREF 0.49 × VDDQ 0.50 × VDDQ 0.51 × VDDQ V 1, 2 Termination voltage VTT VREF − 0.04 VREF VREF + 0.04 V 3 DC input logic high VIH (DC) VREF + 0.125 VDDQ + 0.3 V DC input low VIL (DC) −0.3 VREF – 0.125 V AC input logic high -8G, -6E VIH (AC) VREF + 0.200 V -5C VIH (AC) VREF + 0.250 V AC input low -8G, -6E VIL (AC) VREF – 0.200 V -5C VIL (AC) VREF − 0.250 V Notes: 1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5 × VDDQ of the transmitting device and VREF are expected to track variations in VDDQ. 2. Peak to peak AC noise on VREF may not exceed ±2% VREF (DC). 3. VTT of transmitting device must track VREF of receiving device. 4. VDDQ tracks with VDD, VDDL tracks with VDD. AC parameters are measured with VDD, VDDQ and VDDL tied together. |
Similar Part No. - EDE2104ABSE-6E-E |
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Similar Description - EDE2104ABSE-6E-E |
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