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M4N26 Datasheet(PDF) 1 Page - Motorola, Inc |
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M4N26 Datasheet(HTML) 1 Page - Motorola, Inc |
1 / 8 page 1 Motorola Optoelectronics Device Data 6-Pin DIP Optoisolators Transistor Output The M4N26 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Most Economical Optoisolator Choice for Medium Speed, Switching Applications • Meets or Exceeds All JEDEC Registered Specifications Applications • General Purpose Switching Circuits • Interfacing and coupling systems of different potentials and impedances • I/O Interfacing • Solid State Relays MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit INPUT LED Reverse Voltage VR 3 Volts Forward Current — Continuous IF 60 mA LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25 °C PD 100 1.41 mW mW/ °C OUTPUT TRANSISTOR Collector–Emitter Voltage VCEO 30 Volts Emitter–Collector Voltage VECO 7 Volts Collector–Base Voltage VCBO 70 Volts Collector Current — Continuous IC 50 mA Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25 °C PD 150 1.76 mW mW/ °C TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) VISO 7500 Vac(pk) Total Device Power Dissipation @ TA = 25°C Derate above 25 °C PD 250 2.94 mW mW/ °C Ambient Operating Temperature Range(2) TA – 55 to +100 °C Storage Temperature Range(2) Tstg – 55 to +150 °C Soldering Temperature (10 sec, 1/16 ″ from case) TL 260 °C 1. Isolation surge voltage is an internal device dielectric breakdown rating. 1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions. Order this document by M4N26/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M4N26 SCHEMATIC PIN 1. LED ANODE 2. LED CATHODE 3. N.C. 4. EMITTER 5. COLLECTOR 6. BASE 1 2 3 6 5 4 STANDARD THRU HOLE STYLE 1 PLASTIC 1 6 © Motorola, Inc. 1997 |
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