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Motorola Optoelectronics Device Data

6-Pin DIP Optoisolators

Transistor Output

The M4N26 device consists of a gallium arsenide infrared emitting diode

optically coupled to a monolithic silicon phototransistor detector.

• Most Economical Optoisolator Choice for Medium Speed, Switching Applications

• Meets or Exceeds All JEDEC Registered Specifications

Applications

• General Purpose Switching Circuits

• Interfacing and coupling systems of different potentials and impedances

• I/O Interfacing

• Solid State Relays

Rating

Symbol

Value

Unit

INPUT LED

Reverse Voltage

VR

3

Volts

Forward Current — Continuous

IF

60

mA

LED Power Dissipation @ TA = 25°C

with Negligible Power in Output Detector

Derate above 25

°C

PD

100

1.41

mW

mW/

°C

OUTPUT TRANSISTOR

Collector–Emitter Voltage

VCEO

30

Volts

Emitter–Collector Voltage

VECO

7

Volts

Collector–Base Voltage

VCBO

70

Volts

Collector Current — Continuous

IC

50

mA

Detector Power Dissipation @ TA = 25°C

with Negligible Power in Input LED

Derate above 25

°C

PD

150

1.76

mW

mW/

°C

TOTAL DEVICE

Isolation Surge Voltage(1)

(Peak ac Voltage, 60 Hz, 1 sec Duration)

VISO

7500

Vac(pk)

Total Device Power Dissipation @ TA = 25°C

Derate above 25

°C

PD

250

2.94

mW

mW/

°C

Ambient Operating Temperature Range(2)

TA

– 55 to +100

°C

Storage Temperature Range(2)

Tstg

– 55 to +150

°C

Soldering Temperature (10 sec, 1/16

″ from case)

TL

260

°C

1. Isolation surge voltage is an internal device dielectric breakdown rating.

2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.

Order this document

by M4N26/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

M4N26

SCHEMATIC

PIN 1. LED ANODE

2. LED CATHODE

3. N.C.

4. EMITTER

5. COLLECTOR

6. BASE

1

2

3

6

5

4

STANDARD THRU HOLE

STYLE 1 PLASTIC

1

6