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MCP633T Datasheet(PDF) 4 Page - Microchip Technology |
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MCP633T Datasheet(HTML) 4 Page - Microchip Technology |
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4 / 42 page  MCP631/2/3/5 DS22197A-page 4 © 2009 Microchip Technology Inc. TABLE 1-2: AC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM =VDD/2, VOUT ≈ VDD/2, VL = VDD/2, RL = 2 kΩ to VL, CL = 50 pF and CS =VSS (refer to Figure 1-2). Parameters Sym Min Typ Max Units Conditions AC Response Gain Bandwidth Product GBWP — 24 — MHz Phase Margin PM — 65 — ° G = +1 Open Loop Output Impedance ROUT —20 — Ω AC Distortion Total Harmonic Distortion plus Noise THD+N — 0.0015 — % G = +1, VOUT = 2VP-P, f = 1 kHz, VDD = 5.5V, BW = 80 kHz Step Response Rise Time, 10% to 90% tr —20 — ns G = +1, VOUT = 100 mVP-P Slew Rate SR — 10 — V/µs G = +1 Noise Input Noise Voltage Eni —16 — µVP-P f = 0.1 Hz to 10 Hz Input Noise Voltage Density eni —10 — nV/ √Hz f = 1 MHz Input Noise Current Density ini 4— fA/ √Hz f = 1 kHz TABLE 1-3: DIGITAL ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, VL = VDD/2, RL = 2 kΩ to VL, CL = 50 pF and CS =VSS (refer to Figure 1-1 and Figure 1-2). Parameters Sym Min Typ Max Units Conditions CS Low Specifications CS Logic Threshold, Low VIL VSS —0.2VDD V CS Input Current, Low ICSL —0.1 — nA CS = 0V CS High Specifications CS Logic Threshold, High VIH 0.8VDD VDD V CS Input Current, High ICSH —0.7 — µA CS = VDD GND Current ISS -2 -1 —µA CS Internal Pull Down Resistor RPD —5— M Ω Amplifier Output Leakage IO(LEAK) —50— nA CS = VDD, TA = +125°C CS Dynamic Specifications CS Input Hysteresis VHYST — 0.25 — V CS High to Amplifier Off Time (output goes High-Z) tOFF — 200 — ns G = +1 V/V, VL = VSS CS = 0.8VDD to VOUT = 0.1(VDD/2) CS Low to Amplifier On Time tON —2 10 µs G = +1 V/V, VL = VSS, CS = 0.2VDD to VOUT = 0.9(VDD/2) |
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