42-DL211

點晶科技股份有限公司

點晶科技股份有限公司

點晶科技股份有限公司

點晶科技股份有限公司

SILICON TOUCH TECHNOLOGY INC.

SP-DL211-A.005.doc

- 3 -

Version

：

：

：

PAD DESCRIPTIONS

PAD NO.

PAD NAME

DESCRIPTIONS

1

IN

Input Pad(Active High )

2

VDD

Supply Voltage

3

OUT

Output Pad Sinking Current(Active Low)

4

VSS

Ground

DIE CONFIGURATION

Die Size: 510um * 549um

Die Thickness: 12mil(=300um)

Pad Size: 100um * 100um

* Note: SiTI reserves the right to improve the device geometry and manufacturing

processes without prior notice. Though these improvements may result in

slight geometry changes, they will not affect die electrical characteristics

and pad layouts.

Center (401.6, 449.85)

VSS

Center (195.8, 445.85)

IN

1.

1.

1.

1.

Center (406.25, 102.2)

OUT

3.

3.

3.

3.

Center (102.15, 102.25)

VDD

2.

2.

2.

2.

(0, 0)

(510, 549)

4.

4.

4.

4.

Unit：

：

：

：um