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TTA0001 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TTA0001 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 5 page TTA0001 2009-06-11 3 -1 -0.001 -0.1 -0.001 -0.01 -0.1 -1 -10 0 -10 0 0 -18 -3 -2 -4 -6 -8 -6 -9 -15 100 1000 -0.001 -0.01 -0.1 -1 -10 -0.1 -1 -10 1 Collector-emitter voltage VCE (V) IC – VCE Common emitter Tc = 25°C Single Pulse test -200mA -300mA -70mA Tc = 100°C −55°C 25°C Collector current IC (A) hFE – IC Common emitter VCE = -5 V Single Pulse test 10 −55°C 25°C Collector current IC (A) VCE (sat) – IC Common emitter IC/IB = 10 Single Pulse test -55°C 25°C Collector current IC (A) VBE (sat) – IC Common emitter IC/IB = 10 Single Pulse test −55°C Tc = 100°C 25°C Base-emitter voltage VBE (V) IC – VBE Common emitter VCE =−5 V Single Pulse test -0.01 Tc = 100°C -100 -0.4 -0.8 -1.2 -1.6 Tc = 100°C -12 -40mA -100mA -150mA -10 -100 -0.001 -0.01 -0.1 -1 -10 -100 -2.0 IB =−20mA -18 0 -3 -12 -15 -9 -6 -2.4 |
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