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TTA0001 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # TTA0001
Description  Transistor Silicon PNP Triple Diffused Type
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TTA0001 Datasheet(HTML) 3 Page - Toshiba Semiconductor

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TTA0001
2009-06-11
3
-1
-0.001
-0.1
-0.001
-0.01
-0.1
-1
-10
0
-10
0
0
-18
-3
-2
-4
-6
-8
-6
-9
-15
100
1000
-0.001
-0.01
-0.1
-1
-10
-0.1
-1
-10
1
Collector-emitter voltage VCE (V)
IC – VCE
Common emitter
Tc
= 25°C
Single Pulse test
-200mA
-300mA
-70mA
Tc
= 100°C
−55°C
25°C
Collector current IC (A)
hFE – IC
Common emitter
VCE = -5 V
Single Pulse test
10
−55°C
25°C
Collector current IC (A)
VCE (sat) – IC
Common emitter
IC/IB = 10
Single Pulse test
-55°C
25°C
Collector current IC (A)
VBE (sat) – IC
Common emitter
IC/IB = 10
Single Pulse test
−55°C
Tc
= 100°C
25°C
Base-emitter voltage VBE (V)
IC – VBE
Common emitter
VCE =−5 V
Single Pulse test
-0.01
Tc
= 100°C
-100
-0.4
-0.8
-1.2
-1.6
Tc
= 100°C
-12
-40mA
-100mA
-150mA
-10
-100
-0.001
-0.01
-0.1
-1
-10
-100
-2.0
IB
=−20mA
-18
0
-3
-12
-15
-9
-6
-2.4


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