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TPC8118 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TPC8118 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPC8118 2009-09-29 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ) TPC8118 Notebook PC Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 5.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 36 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID −13 Drain current Pulse (Note 1) IDP −52 A Drain power dissipation (t = 10 s) (Note 2a) PD 1.9 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W Single pulse avalanche energy (Note 3) EAS 110 mJ Avalanche current IAR −13 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.030 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note 1, Note 2, Note 3 and Note 4: See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 8 6 1 2 3 7 5 4 |
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