TPC8118

2009-09-29

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ)

TPC8118

Notebook PC Applications

• Small footprint due to small and thin package

Characteristics

Symbol

Rating

Unit

Drain-source voltage

−30

V

−30

V

Gate-source voltage

±20

V

DC

(Note 1)

−13

Drain current

Pulse (Note 1)

−52

A

Drain power dissipation (t

= 10 s)

(Note 2a)

1.9

W

Drain power dissipation (t

= 10 s)

(Note 2b)

1.0

W

Single pulse avalanche energy

(Note 3)

110

mJ

Avalanche current

−13

A

Repetitive avalanche energy

(Note 2a) (Note 4)

0.030

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1, Note 2, Note 3 and Note 4: See the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/“Derating

Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-6J1B

Weight: 0.080 g (typ.)

Circuit Configuration

8

6

1

2

3

7

5

4