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TPC6503 Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part # TPC6503
Description  Transistor Silicon NPN Epitaxial Type
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC6503 Datasheet(HTML) 4 Page - Toshiba Semiconductor

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TPC6503
2006-02-16
4
Pulse width tw (s)
Transient Thermal Resistance rth – tw
1
0.001
0.01
0.1
1
10
100
1000
10
100
1000
この過渡熱抵抗データは熱抵抗制限領域にだけ適用されます。
単発パルス測定
Ta
= 25°C
FR4 基板実装時
(645 mm
2 × 1.6 mm, ガラスエポキシ, Cu 面積 645 mm2)
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta
= 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm
2)
Collector
−emitter voltage VCE (V)
Safe operating area
1 ms*
10 ms*
VCEO max
100 μs*
100 ms*
IC max (Pulse)*
DC
operation
Ta = 25°C
IC max (Continuous)*
10 s*
*: Single nonrepetitive pulse
Ta
= 25°C
Note that the curves for 100 ms,
10 s and DC operation will be
different when the device aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
2).
Single-device operation
These characteristic curves must
be derated linearly with increase
in temperature.
10
0.01
1
0.1
VCEO max
0.1
10
1
100


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