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TPC6503 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TPC6503 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 5 page TPC6503 2006-02-16 4 Pulse width tw (s) Transient Thermal Resistance rth – tw 1 0.001 0.01 0.1 1 10 100 1000 10 100 1000 この過渡熱抵抗データは熱抵抗制限領域にだけ適用されます。 単発パルス測定 Ta = 25°C FR4 基板実装時 (645 mm 2 × 1.6 mm, ガラスエポキシ, Cu 面積 645 mm2) Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 2) Collector −emitter voltage VCE (V) Safe operating area 1 ms* 10 ms* VCEO max 100 μs* 100 ms* IC max (Pulse)* DC operation Ta = 25°C IC max (Continuous)* 10 s* *: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms, 10 s and DC operation will be different when the device aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 2). Single-device operation These characteristic curves must be derated linearly with increase in temperature. 10 0.01 1 0.1 VCEO max 0.1 10 1 100 |
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