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TB7101AFT5L1.8 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TB7101AFT5L1.8 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 22 page TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) 2008-05-22 4 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN −0.3 to 6 V Enable pin voltage VEN −0.3 to 6 V VEN−VIN voltage difference VEN − VIN VEN − VIN < 0.3 V Feedback pin voltage VFB −0.3 to 6 V Switch pin voltage VLX −0.3 to 6 V Switch pin current ILX ±1.3 A Power dissipation (Note 1) PD 0.7 W Operating junction temperature Tjopr −40 to 125 °C Junction temperature (Note 2) Tj 150 °C Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) Thermal Resistance Characteristic Characteristics Symbol Max Unit Thermal resistance, junction and ambient Rth (j-a) 178.6 (Note 1) °C/W Note 1: Note 2: The TB7101AF may go into thermal shutdown at the rated maximum junction temperature. Thermal design is required to ensure that the rated maximum operating junction temperature, Tjopr, will not be exceeded. Glass epoxy board Material: FR-4 25.4 × 25.4 × 0.8 (Unit: mm) |
Similar Part No. - TB7101AFT5L1.8 |
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