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TB7102AF Datasheet(PDF) 9 Page - Toshiba Semiconductor |
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TB7102AF Datasheet(HTML) 9 Page - Toshiba Semiconductor |
9 / 17 page TB7102AF 2008-05-22 9 Usage Precautions • The input voltage, output voltage, output current and temperature conditions should be considered when selecting capacitors, inductors and resistors. These components should be evaluated on an actual system prototype for best selection. • External components such as capacitors, inductor and resistors should be placed as close to the TB7102AF as possible. • The TB7102AF has an ESD diode between the EN and VIN pins. The voltage between these pins should satisfy VEN − VIN < 0.3 V. • Operation might become unstable due to board layout. In that case, add a decoupling capacitor (CC) of 0.1 μF to 1 μF between the SGND and VIN pins. • The overcurrent protection circuits in the Product are designed to temporarily protect Product from minor overcurrent of brief duration. When the overcurrent protective function in the Product activates, immediately cease application of overcurrent to Product. Improper usage of Product, such as application of current to Product exceeding the absolute maximum ratings, could cause the overcurrent protection circuit not to operate properly and/or damage Product permanently even before the protection circuit starts to operate. • The thermal shutdown circuits in the Product are designed to temporarily protect Product from minor overheating of brief duration. When the overheating protective function in the Product activates, immediately correct the overheating situation. Improper usage of Product, such as the application of heat to Product exceeding the absolute maximum ratings, could cause the overheating protection circuit not to operate properly and/or damage Product permanently even before the protection circuit starts to operate. |
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Similar Description - TB7102AF |
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