SSM3J129TU datasheet(3/6 Pages) TOSHIBA

Part #	SSM3J129TU

Description	Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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3 / 6 page

SSM3J129TU

2008-09-30

3

Drain–source voltage VDS (V)

ID – VDS

0

-10

0

-0.2

-0.6

-0.8

-1

-6

Gate–source voltage VGS (V)

ID – VGS

-10000

-0.01

0

-100

-1000

-1

-10

-0.1

-2.0

−25 °C

Common Source

VDS = -3 V

Ta

= 100 °C

25 °C

-0.5

ID = -0.3 A

Common Source

Ambient temperature Ta (°C)

RDS (ON) – Ta

Common Source

100

0

−50

ID = -0.3 A / VGS = -1.5 V

0

50

150

20

40

60

80

100

Drain current ID (A)

RDS (ON) – ID

0

-2

-6

-8

Common Source

Ta

= 25°C

VGS = -1.5 V

-1.5 V

-1.5

-1.0

-2.5 V

-1.8 V

Gate–source voltage VGS (V)

0

-4

-8

0

40

80

120

160

RDS (ON) – VGS

25 °C

Ta

= 100 °C

−25 °C

-2.0 A / -2.5 V

-2

-4

100

200

Common Source

Ta

= 25 °C

-1.8 V

-2.5 V

180

140

100

60

20

-2

-4.5 V

-3.0 A / -4.5 V

-0.4

-4.5 V

VGS = -1.2 V

ID = -3.0 A

Common Source

0

-2

-6

-8

Gate–source voltage VGS (V)

-4

0

40

80

120

160

RDS (ON) – VGS

25 °C

Ta

= 100 °C

−25 °C

180

140

100

60

20

-10

-1.0 A / -1.8 V

120

-8

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SSM3J129TU Datasheet(PDF) 3 Page - Toshiba Semiconductor

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