HN4B102J datasheet(3/6 Pages) TOSHIBA

Part #	HN4B102J

Description	Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)

Download	6 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

Logo

3 / 6 page

HN4B102J

2009-06-17

3

PNP

Safe operating area

-10

-0.01

-1

-0.1

Collector

−emitter voltage VCE

(V)

-0.1

-1

-10

-100

-1

-0.01

-0.1

-0.001

-0.01

-0.1

-1

-10

0

-0.4

-0.8

-1.6

-1.2

-2

0

-0.4

-0.8

-2

0

-2

-0.4

-0.8

-1.2

-1.6

-0.8

-1.2

-1.6

100

1000

-0.001

-0.01

-0.1

-1

-10

-0.1

-1

-10

-0.001

-0.01

-0.1

-1

-10

10

-0.3

-3

-1.2

-1.6

Collector

−emitter voltage VCE

(V)

IC – VCE

Common emitter

Ta

= 25°C

Single nonrepetitive pulse

-10

-8

-3

IB =− 1 mA

-20

-5

-6

-4

-2

Ta

= 100°C

−55°C

25°C

Collector current IC (A)

hFE – IC

Common emitter

VCE = −2 V

Single nonrepetitive pulse

30

300

Ta

= 100°C

−55°C

25°C

Collector current IC (A)

VCE (sat) – IC

Common emitter

IC/IB = 30

Single nonrepetitive pulse

100°C

25°C

Collector current IC (A)

VBE (sat) – IC

Common emitter

IC/IB = 30

Single nonrepetitive pulse

−55°C

Ta

= 100°C

25°C

Base

−emitter voltage VBE (V)

IC – VBE

Common emitter

VCE = −2 V

Single nonrepetitive

pulse

-0.03

-0.3

Ta

= -55°C

*: Single nonrepetitive pulse

Ta

= 25°C

Note that the curves for 100 ms, 10 s and

DC operation will be different when the

devices aren’t mounted on an FR4 board

(glass-epoxy, 1.6 mm thick, Cu area: 645

mm

2).

Single-device operation

These characteristic curves must be

derated linearly with increase in

temperature.

1 ms*

10 ms*

IC max (pulse) *

DC operation

Ta = 25°C

IC max

(continuous)*

10 s*

IC max (pulse) *

100 ms*

10 μs*

100μs*

Similar Part No. - HN4B102J

Manufacturer	Part #	Datasheet	Description
Toshiba Semiconductor	HN4B102J	1Mb / 73P	Bipolar Small-Signal Transistors

More results

Similar Description - HN4B102J

Manufacturer	Part #	Datasheet	Description
Toshiba Semiconductor	RN4605	163Kb / 5P	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
	RN4607	161Kb / 5P	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
	RN4602	329Kb / 5P	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
	RN4603	166Kb / 5P	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
	RN4608	157Kb / 5P	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
	RN4911	177Kb / 6P	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
	RN4606	159Kb / 4P	Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
	RN4908	155Kb / 5P	Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
	RN4988	217Kb / 6P	Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
	RN4989	216Kb / 6P	Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
	RN4606	250Kb / 5P	Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

More results

HN4B102J Datasheet(PDF) 3 Page - Toshiba Semiconductor

HN4B102J Datasheet(HTML) 3 Page - Toshiba Semiconductor

Similar Part No. - HN4B102J

Similar Description - HN4B102J

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL