2SK2606

2002-06-27

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)

2SK2606

DC−DC Converter, Relay Drive and Motor Drive

Applications

l Low drain−source ON resistance

l Low leakage current

l Enhancement−mode

Characteristics

Symbol

Rating

Unit

Drain−source voltage

800

V

800

V

Gate−source voltage

±30

V

DC

(Note 1)

8

A

Drain current

Pulse (Note 1)

24

A

Drain power dissipation (Tc = 25°C)

85

W

Single pulse avalanche energy

(Note 2)

883

mJ

Avalanche current

8

A

Repetitive avalanche energy (Note 3)

8.5

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

1.47

°C / W

Thermal resistance, channel to

ambient

41.6

°C / W

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device.

Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-16F1B

Weight: 5.8 g (typ.)