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2SK2229 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SK2229 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SK2229 2004-07-06 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 −π−MOSV) 2SK2229 Chopper Regulator, DC−DC Converter and Motor Drive Applications 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.12 Ω (typ.) High forward transfer admittance : |Yfs| = 5.0 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 60 V Drain−gate voltage (RGS = 20 kΩ) VDGR 60 V Gate−source voltage VGSS ±20 V DC (Note 1) ID 5 A Drain current Pulse (Note 1) IDP 20 A Drain power dissipation PD 1.3 W Single pulse avalanche energy (Note 2) EAS 129 mJ Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 0.13 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient Rth (ch−a) 96.1 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 7 mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-8M1B Weight: 0.54 g (typ.) |
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