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2SK2034 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SK2034 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 2SK2034 2007-11-01 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2034 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage.: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.16 μs (typ.) toff = 0.15 μs (typ.) • Small package. • Enhancement-mode Marking Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS 10 V DC drain current ID 100 mA Drain power dissipation PD 100 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This transistor is electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA SC-70 TOSHIBA 2-2E1E Weight: 0.006 g (typ.) |
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