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MCP1631VHV Datasheet(PDF) 5 Page - Microchip Technology |
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MCP1631VHV Datasheet(HTML) 5 Page - Microchip Technology |
5 / 34 page © 2008 Microchip Technology Inc. DS22063B-page 5 MCP1631/HV/MCP1631V/VHV 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † VIN - GND (MCP1631/V)................................................+6.5V VIN - GND (MCP1631HV/VHV)....................................+18.0V All Other I/O ..............................(GND - 0.3V) to (VDD + 0.3V) LX to GND............................................. -0.3V to (VDD + 0.3V) VEXT Output Short Circuit Current ........................Continuous Storage temperature .....................................-65°C to +150°C Maximum Junction Temperature...................-40°C to +150°C Operating Junction Temperature...................-40°C to +125°C ESD Protection On All Pins: HBM ................................................................................. 4 kV MM ..................................................................................400V † Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VDD for typical values = 5.0V, TA for typical values = +25°C, TA = -40°C to +125°C for all minimum and maximums. Parameters Sym Min Typ Max Units Conditions Input Characteristics Input Voltage (MCP1631/V) VDD 3.0 — 5.5 V Non-HV Options Input Voltage (MCP1631HV/VHV) VDD 3.5 — 16.0 V HV Options (Note 2) Undervoltage Lockout (MCP1631/V) UVLO 2.7 2.8 3.0 V VIN Falling, VEXT low when input below UVLO threshold Undervoltage Lockout Hysteresis (MCP1631/MCP1631V) UVLO_HYS 40 64 100 mV UVLO Hysteresis Input Quiescent Current (MCP1631/V, MCP1631HV,VHV) I(VIN)— 3.7 5 mA SHDN =VDD =OSCDIS Shutdown Current I_AVDD for MCP1631/V I_VIN for MCP1631HV/VHV IIN_SHDN — 2.4 4.4 12 17 µA µA SHDN =GND =OSCDIS, Note: Amplifier A3 remains powered during Shutdown. OSCIN, OSCDIS and SHDN Input Levels Low Level Input Voltage VIL —— 0.8 V High Level Input Voltage VIH 2.0 — — V Input Leakage Current ILEAK 0.005 1 µA External Oscillator Range FOSC — — 2 MHz Maximum operating frequency is dependent upon circuit topology and duty cycle. Minimum Oscillator High Time Minimum Oscillator Low Time TOH_MIN. TOL_MIN. —10 — ns Oscillator Rise and Fall Time TR and TF 0.01 — 10 µs Note 1 Oscillator Input Capacitance COSC —5 — pf Note 1: External Oscillator Input (OSCIN) rise and fall times between 10 ns and 10 µs were determined during device characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90% of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and specified that are not production tested. 2: The minimum VIN must meet two conditions: VIN ≥ 3.5V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)). 3: TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range. 4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCVOUT. 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 3.5V, whichever is greater. |
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