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RD16HHF1 Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor |
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RD16HHF1 Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor |
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5 / 8 page  MITSUBISHI RF POWER MOS FET RD16HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W RD16HHF1 MITSUBISHI ELECTRIC 7 Mar 2008 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TEST CIRCUIT(f=30MHz) RD 16HHF1 C 2:470pF*2 in parallel C 1:100pF,0.022uF,0.1uF in parallel Note:Board material-teflon substrate L5:5Turns,I.D 5.6mm,D 0.9mm,P=1mm copper wire L4:4Turns,I.D 5.6mm,D 0.9mm,P=0.5mm copper wire L3:9Turns,I.D 5.6mm,D 0.9mm copper wire L1:10Turns,I.D8mm,D 0.9mm copper wire C2 C1 C1 C1 C1 C2 L2:10Turns,I.D6mm,D 1.6mm silver plateted copper wire RF-OUT RF-IN 67 45 100 200pF L4 100pF 1 ohm L3 220pF 20pF 82pF 1K ohm L2 L1 8.2K ohm 85 75 15 1.5 Dimensions:mm Vdd Vgg 330uF,50V micro strip line width=4.2mm/50 ohm,er:2.7,t=1.6mm 34 41 43 5 15 65 / 100pF 220pF 10uF,50V *3pcs 91 100pF 200pF 88pF L5 90 100 68pF 5/8 |
Similar Part No. - RD16HHF1 |
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Similar Description - RD16HHF1 |
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