MITSUBISHI RF POWER MOS FET

ELECTROSTATIC SENSITIVE DEVICE

RD06HHF1

RoHS Compliance,

Silicon MOSFET Power Transistor 30MHz,6W

RD06HHF1

MITSUBISHI ELECTRIC

7 Mar 2008

OBSERVE HANDLING PRECAUTIONS

ABSOLUTE MAXIMUM RATINGS

SYMBOL

PARAMETER

CONDITIONS

RATINGS UNIT

Drain to source voltage

Vgs=0V

50

V

Gate to source voltage

Vds=0V

+/- 20

V

Pch

Channel dissipation

27.8

W

Pin

Input power

0.3

W

ID

Drain current

-

3

A

Tch

Channel temperature

-

150

°C

Tstg

Storage temperature

-

-40 to +150

°C

Rth j-c

Thermal resistance

junction to case

4.5

°C/W

Note 1: Above parameters are guaranteed independently.

ELECTRICAL CHARACTERISTICS

LIMITS

UNIT

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX.

Drain cutoff current

-

-

10

uA

Gate cutoff current

-

-

1

uA

Gate threshold Voltage

1.9

-

4.9

V

Pout

Output power

6

10

-

W

ηD

Drain efficiency

f=30MHz, Idq=0.5A

55

65

-

%

Load VSWR tolerance

Load VSWR=20:1(All Phase)

No destroy

-

Note : Above parameters , ratings , limits and conditions are subject to change.

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