PS21964-T_09 datasheet(5/10 Pages) MITSUBISHI

Part #	PS21964-T

Description	Dual-In-Line Package Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

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MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>

PS21964-T/-AT/-CT/-TW

TRANSFER-MOLD TYPE

INSULATED TYPE

Mar. 2009

5

2.20

2.30

2.20

1.90

—

0.75

2.20

0.80

1

10

3.0

3.9

mA

V

Tj = 25

°C

Tj = 125

°C

IC = 15A, Tj = 25

°C

IC = 15A, Tj = 125

°C

VCE(sat)

VEC

ton

trr

tc(on)

toff

tc(off)

ICES

Condition

Symbol

Parameter

Limits

Inverter IGBT part (per 1/6 module)

Inverter FWD part (per 1/6 module)

Rth(j-c)Q

Rth(j-c)F

Min.

THERMAL RESISTANCE

Typ.

Max.

—

Unit

Tj = 25

°C, –IC = 15A, VIN = 0V

Condition

Symbol

Parameter

Limits

Min.

Typ.

Max.

—

0.70

—

Unit

ELECTRICAL CHARACTERISTICS (Tj = 25

°C, unless otherwise noted)

INVERTER PART

Collector-emitter saturation

voltage

FWD forward voltage

Junction to case thermal

resistance

(Note 3)

VD = VDB = 15V

VIN = 5V

Switching times

VCC = 300V, VD = VDB = 15V

IC = 15A, Tj = 125

°C, VIN = 0 ↔ 5V

Inductive load (upper-lower arm)

Collector-emitter cut-off

current

VCE = VCES

1.70

1.80

1.70

1.30

0.30

0.50

1.60

0.50

—

V

µs

°C/W

Note 3 : Grease with good thermal conductivity should be applied evenly with about +100

µm~+200µm on the contacting surface of DIPIPM and

heat-sink.

The contacting thermal resistance between DIPIPM case and heat sink (Rth(c-f)) is determined by the thickness and the thermal

con-

ductivity of the applied grease. For reference, Rth(c-f) (per 1/6 module) is about 0.3

°C/W when the grease thickness is 20µm and

the thermal conductivity is 1.0W/m·k.

IGBT chip position

Power terminals

FWD chip position

Control terminals

TC point

Heat sink side

11.6mm

3mm

400

–20~+100

–40~+125

1500

VD = 13.5~16.5V, Inverter part

Tj = 125

°C, non-repetitive, less than 2µs

(Note 2)

60Hz, Sinusoidal, 1 minute,

Between pins and heat-sink plate

VCC(PROT)

TC

Tstg

Viso

Symbol

Ratings

Unit

Self protection supply voltage limit

(short circuit protection capability)

Module case operation temperature

Storage temperature

Isolation voltage

V

°C

Vrms

TOTAL SYSTEM

Parameter

Condition

Note 2: TC measurement point

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