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CM1400DU-24NF Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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CM1400DU-24NF Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 4 page Feb. 2009 2 VCE = VCES, VGE = 0V IC = 140mA, VCE = 10V ±VGE = VGES, VCE = 0V Tj = 25 °C Tj = 125 °C Ic = 1400A, terminal-chip VCE = 10V VGE = 0V VCC = 600V, IC = 1400A, VGE = 15V VCC = 600V, IC = 1400A VGE = ±15V RG = 0.22 Ω, Inductive load IE = 1400A IE = 1400A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied (1/2 module) Case temperature measured point is just under the chips (IGBT part) Case temperature measured point is just under the chips (FWDi part) 1200 ±20 1400 2800 1400 2800 3900 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 1400 MITSUBISHI IGBT MODULES CM1400DU-24NF HIGH POWER SWITCHING USE V V W °C °C Vrms N • m N • m g A A 1 8 1.5 2.5 — — 220 25 4.7 — 800 300 1000 300 700 — 3.2 0.032 0.053 — 0.014 0.023 2.2 mA V µA V m Ω nF nC ns ns µC V K/W Ω — 7 — 1.8 2.0 0.286 — — — 7200 — — — — — 90 — — — 0.016 — — — — 6 — — — — — — — — — — — — — — — — — — — — 0.22 Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage (without lead resistance) Module lead resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage (without lead resistance) Thermal resistance*3 Contact thermal resistance*2 Thermal resistance*1 External gate resistance Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc’) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING. *4 : The operation temperature is restrained by the permission temperature of female connector. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature*4 Isolation voltage Weight G-E Short C-E Short TC’ = 94 °C*1 Pulse (Note 2) TC = 25 °C Pulse (Note 2) TC = 25 °C Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Symbol Parameter Collector current Emitter current Torque strength Conditions Unit Ratings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — Unit Typ. Min. Max. — MAXIMUM RATINGS (Tj = 25 °C, unless otherwise specified) ELECTRICAL CHARACTERISTICS (Tj = 25 °C, unless otherwise specified) ICES VGE(th) IGES VCE(sat) (chip) R(lead) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) (chip) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Rth(j-c’)R RG Symbol Parameter Test conditions Limits IC = 1400A, VGE = 15V (Note 4) |
Similar Part No. - CM1400DU-24NF_09 |
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Similar Description - CM1400DU-24NF_09 |
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