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CM1000E4C-66R Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor

Part # CM1000E4C-66R
Description  HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

CM1000E4C-66R Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor

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PRELIMINARY
Notice:
This
is not
a final
specification.
Some
parametric
limits
are subject
to change.
Mar. 2009
5
MITSUBISHI HVIGBT MODULES
CM1000E4C-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
6
7
5
4
3
2
1
0
0
400
800
1200
1600
2000
6
7
5
4
3
2
1
0
0
400
800
1200
1600
2000
102
103
101
100
100
10-1
23
5 7
101
102
23
5 7
23
5 7
2
3
5
7
2
3
5
7
2
3
5
7
CAPACITANCE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE CHARGE (
µC)
COLLECTOR CURRENT (A)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT (A)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
-15
-10
-5
0
5
10
15
20
12
8
4
016
VCE = 1800V, IC = 1000A
Tj = 25
°C
Eon
Eoff
Erec
Eoff
Cies
Coes
Cres
VCC = 1800V, VGE =
±15V
RG(on) = 2.4
Ω, RG(off) = 8.4Ω
LS = 150nH, Tj = 125
°C
Inductive load
VCC = 1800V, VGE =
±15V
RG(on) = 2.4
Ω, RG(off) = 8.4Ω
LS = 150nH, Tj = 150
°C
Inductive load
Eon
VGE = 0V, Tj = 25
°C
f = 100kHz
Erec


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