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CM1000E4C-66R Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part # CM1000E4C-66R
Description  HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

CM1000E4C-66R Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

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PRELIMINARY
Notice:
This
is not
a final
specification.
Some
parametric
limits
are subject
to change.
Mar. 2009
4
MITSUBISHI HVIGBT MODULES
CM1000E4C-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
EMITTER-COLLECTOR VOLTAGE (V)
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS
(TYPICAL)
1600
2000
1200
800
400
0
34
1
05
6
0
012345
0
1600
2000
1200
800
400
0
1600
2000
1200
800
400
0
012345
1600
2000
1200
800
400
2
68
210
12
4
Tj = 25
°C
Tj = 150
°C
VGE = 15V
VCE = VGE
Tj = 150
°C
VGE = 9V
VGE = 11V
VGE = 19V
VGE = 15V
VGE = 13V
Tj = 25
°C
Tj = 125
°C
Tj = 150
°C
Tj = 25
°C
Tj = 125
°C
Tj = 150
°C


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