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CM600DU-5F Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor |
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CM600DU-5F Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor |
4 / 4 page Feb. 2009 4 MITSUBISHI IGBT MODULES CM600DU-5F HIGH POWER SWITCHING USE 101 102 23 5 7 103 23 5 7 101 102 2 3 5 7 103 2 3 5 7 101 102 2 3 5 7 103 2 3 5 7 trr Irr REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT IE (A) Conditions: VCC = 100V VGE = ±10V RG = 4.2 Ω Tj = 25 °C Inductive load 101 10–3 10–5 10–4 100 7 5 3 2 10–2 7 5 3 2 10–1 7 5 3 2 7 5 3 2 10–323 5 7 23 5 7 23 5 7 23 5 7 101 10–2 10–1 100 10–3 10–3 7 5 3 2 10–2 7 5 3 2 10–1 3 2 23 5 7 23 5 7 Single Pulse TC = 25 °C TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) TIME (s) IGBT part: Per unit base = Rth(j–c) = 0.11 K/W FWDi part: Per unit base = Rth(j–c) = 0.20 K/W 0 4 8 16 12 20 0 500 2000 4500 3500 2500 1000 1500 4000 3000 GATE CHARGE CHARACTERISTICS (TYPICAL) GATE CHARGE QG (nC) VCC = 50V VCC = 100V IC = 600A 101 102 57 103 23 5 7 23 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) Conditions: VCC = 100V VGE = ±10V RG = 4.2 Ω Tj = 125 °C Inductive load td(off) td(on) tf tr |
Similar Part No. - CM600DU-5F_09 |
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Similar Description - CM600DU-5F_09 |
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