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CM400DU-12H Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part # CM400DU-12H
Description  IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

CM400DU-12H Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

  CM400DU-12H_09 Datasheet HTML 1Page - Mitsubishi Electric Semiconductor CM400DU-12H_09 Datasheet HTML 2Page - Mitsubishi Electric Semiconductor CM400DU-12H_09 Datasheet HTML 3Page - Mitsubishi Electric Semiconductor CM400DU-12H_09 Datasheet HTML 4Page - Mitsubishi Electric Semiconductor  
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Feb. 2009
4
MITSUBISHI IGBT MODULES
CM400DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT IE (A)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE CHARGE QG (nC)
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
101
103
101
102
102
103
100
102
101
–di/dt = 800A/
µs
Tj = 25
°C
trr
lrr
101
102
23
5
7
103
23
5
7
101
102
2
3
5
7
103
2
3
5
7
VCC = 300V
VGE =
±15V
RG = 1.6
Ω
Tj = 125
°C
td(off)
td(on)
tf
tr
101
10–3
10–5
10–4
100
7
5
3
2
10–2
7
5
3
2
10–1
7
5
3
2
7
5
3
2
10–323 5 7
23 5 7
23 5 7
23 5 7
101
10–2
10–1
100
10–3
10–3
7
5
3
2
10–2
7
5
3
2
10–1
3
2
23 5 7
23 5 7
Single Pulse
TC = 25
°C
Per unit base = Rth(j – c) = 0.18K/W
101
10–3
10–5
10–4
100
7
5
3
2
10–2
7
5
3
2
10–1
7
5
3
2
7
5
3
2
10–323 5 7
23 5 7
23 5 7
23 5 7
101
10–2
10–1
100
10–3
10–3
7
5
3
2
10–2
7
5
3
2
10–1
3
2
23 5 7
23 5 7
Single Pulse
TC = 25
°C
Per unit base = Rth(j – c) = 0.11K/W
0
5
10
15
20
25
0
200 400 600 800
1400
1000 1200
VCC = 200V
VCC = 300V
IC = 400A
7
5
3
2
23
5 7
7
5
3
2
23
5 7
7
5
3
2
7
5
3
2
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
TIME (s)


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