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CM100RL-24NF Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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CM100RL-24NF Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 6 page  Feb. 2009 3 VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V VCC = 600V, IC = 100A, VGE = 15V VCC = 600V, IC = 100A VGE = ±15V RG = 3.1 Ω, Inductive load IE = 100A IE = 100A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to heat sink, Thermal compound Applied (1/6 module)*2 IC = 5.0mA IC = 50A, VGE = 15V VCE = 10V VGE = 0V IC = 10mA, VCE = 10V IC = 100A, VGE = 15V VCE = 10V VGE = 0V VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V VCC = 600V, IC = 50A, VGE = 15V IF = 50A IGBT part*1 Clamp diode part*1 MITSUBISHI IGBT MODULES CM100RL-24NF HIGH POWER SWITCHING USE 1 0.5 3.0 — 17.5 1.5 0.34 — 100 70 300 350 150 — 3.8 0.20 0.28 — 42 mA µA nF nF nF nC ns ns ns ns µC V K/W K/W K/W Ω — — 2.1 2.4 — — — 500 — — — — — 4.8 — — — 0.085 — — — — — — — — — — — — — — — — — — — 3.1 7V V 68 ns Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Symbol Parameter VGE(th) VCE(sat) Unit Typ. Limits Min. Max. Test conditions ELECTRICAL CHARACTERISTICS (Tj = 25 °C, unless otherwise specified) INVERTER PART 1 0.5 3.0 — 8.5 0.75 0.17 — 3.8 0.32 0.43 63 mA µA nF nF nF nC V K/W K/W Ω — — 2.1 2.4 — — — 250 — — — — — — — — — — — — — — — 6.3 7V V 68 Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Forward voltage drop Thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage ICES IGES Cies Coes Cres QG VFM Rth(j-c)Q Rth(j-c)R RG Symbol Parameter VGE(th) VCE(sat) *1 : Case temperature (Tc) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Unit Typ. Limits Min. Max. Test conditions BRAKE PART Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C |
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Similar Description - CM100RL-24NF |
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